050-7135 rev b 3-2012 maximum ratings all ratings: t c = 25c unless otherwise speci ed. "coolmos ? comprise a new family of transistors developed by in neon technologies ag. "coolmos" is a trade- mark of in neon technologies ag" APT11N80KC3 800v 11a 0.450 g d s to-220 static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms a na volts min typ max 800 0.39 0.45 0.5 20 200 100 2.1 3 3.9 characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250 a) drain-source on-state resistance 2 (v gs = 10v, i d = 7.1a) zero gate voltage drain current (v ds = 800, v gs = 0v) zero gate voltage drain current (v ds = 800, v gs = 0v, t j = 150c) gate-source leakage current (v gs = 20v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 680 a) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l dv / dt i ar e ar e as parameter drain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuous gate-source voltage transient total power dissipation @ t c = 25c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. drain-source voltage slope (v ds = 640v, i d = 11a, t j = 125c) repetitive avalanche current 7 repetitive avalanche energy 7 single pulse avalanche energy 4 unit volts amps volts watts w/c c v/ns amps mj APT11N80KC3 800 11 33 20 30 156 1.25 -55 to 150 260 50 11 0.2 470 caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. microsemi website - http://www.microsemi.com ? ultra low r ds(on) ? low miller capacitance ? ultra low gate charge, q g ? avalanche energy rated ? extreme dv / dt rated super junction mosfet
dynamic characteristics APT11N80KC3 050-7135 rev b 3-2012 single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.90 0.80 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0 0.5 0.1 0.3 0.7 0.9 0.05 characteristic / test conditions continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = - 11a ) reverse recovery time (i s = 11a , dl s /dt = -100a/ s, v r = 640v) reverse recovery charge (i s = 11a , dl s /dt = -100a/ s, v r = 640v) peak diode recovery dv / dt 5 unit amps volts ns c v/ns min typ max 11 33 1 1.2 550 10 6 symbol r jc r ja min typ max 0.80 62 unit c/w characteristic junction to case junction to ambient symbol i s i sm v sd t rr q rr dv / dt symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energy turn-on switching energy 6 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 400v i d = 11a @ 25c resistive switching v gs = 10v v dd = 400v i d = 11a @ 25c r g = 7.5 inductive switching @ 25c v dd = 533v, v gs = 15v i d = 11a, r g = 5 inductive switching @ 125c v dd = 533v v gs = 15v i d = 11a, r g = 5 min typ max 1585 770 18 60 8 30 25 15 70 80 7 10 165 50 305 65 unit pf nc ns j source-drain diode ratings and characteristics thermal characteristics 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 194mh, r g = 25 , peak i l = 2.2a 5 dv / dt numbers re ect the limitations of the test circuit rather than the device itself. i s - i d 11a di / dt 700a/ s v r v dss t j 150 c 6 eon includes diode reverse recovery. see gures 18, 20. 7 repetitve avalanche causes additional power losses that can be calculated as p av =e ar *f microsemi reserves the right to change, without notice, the speci cations and information contained peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note:
APT11N80KC3 050-7135 rev b 3-2012 4.5v 5v 5.5v 4v v gs =15 & 10v v gs =10v v gs =20v t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds (on)max. 250 sec. pulse test @ <0.5 % duty cycle 6v 6.5v normalized to v gs = 10v @ 5.5a 45 40 35 30 25 20 15 10 5 0 12 10 8 6 4 2 0 3.0 2.5 2.0 1.5 1.0 0.5 0 i d = 5.5a v gs = 10v v ds , drain-to-source voltage (volts) figure 2, not used figure 3, low voltage outpu t characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds(on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature 0 5 10 15 20 0 1 2 3 4 5 6 7 8 9 10 0 4 8 12 16 20 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on) , drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) typical performance 30 25 20 15 10 5 0 1.40 1.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 1.2 1.1 1.0 0.9 0.8 0.7 0.6
APT11N80KC3 050-7135 rev b 3-2012 c rss c iss c oss v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 10 100 800 0 10 20 30 40 50 0 20 40 60 80 100 0.3 0.5 0.7 0.9 1.1 1.3 1.5 33 10 5 1 .1 16 12 8 4 0 t c =+25c t j =+150c single pulse 10ms 1ms 100 s t j =+150c t j =+25c i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 533v r g = 5 t j = 125c l = 100 h e on e off t r t f switching energy (mj) t d(on) and t d(off) (ns) switching energy (mj) t r and t f (ns) 5 8 11 14 17 20 5 8 11 14 17 20 5 8 11 14 17 20 0 5 10 15 20 25 30 35 40 45 50 v dd = 533v i d = 11a t j = 125c l = 100 h e on includes diode reverse recovery. v ds = 400v v ds = 160v v ds = 640v i d = 11a t d(on) t d(off) e on e off 70 60 50 40 30 20 10 0 500 400 300 200 100 0 v dd = 533v r g = 5 t j = 125c l = 100 h v dd = 533v r g = 5 t j = 125c l = 100 h e on includes diode reverse recovery. 10,000 1,000 100 10 1 100 10 1 operation here limited by r ds (on) 40 30 20 10 0 500 400 300 200 100 0
APT11N80KC3 050-7135 rev b 3-2012 i c d.u.t. apt15df60b v ce figure 20, inductive switching test circuit v dd g 10% 5% 10% t d(on) t r 90% collector current collector voltage gate voltage t j = 125 c 5 % switching energy t j = 125 c 90% t d(off) 0 t f 90% 10% gate voltage collector current collector voltage switching energy to-220 (k) package outline e3 100% sn plated source 10.66 (.420) 9.66 (.380) 5.33 (.210) 4.83 (.190) 14.73 (.580) 12.70 (.500) 1.01 (.040) 3-plcs. 0.83 (.033) 2.79 (.110) 2.29 (.090) 4.82 (.190) 3.56 (.140) 1.39 (.055) 0.51 (.020) 4.08 (.161) dia . 3.54 (.139) dimensions in millimeters and (inches) gate drai n 6.85 (.270) 5.85 (.230) 1.77 (.070) 3-plcs. 1.15 (.045) 2.92 (.115) 2.04 (.080) 3.42 (.135) 2.54 (.100) 0.50 (.020) 0.41 (.016) 5.33 (.210) 4.83 (.190) drai n 12.192 (.480) 9.912 (.390) 3.683 (.145) max.
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